Wide Range Temperature Dependence of Polysilicon Electrical Resistance

Temperature dependence of polysilicon electrical resistance is investigated. Using existing polysilicon electrical conduction models with small modifications, it can be shown that the temperature coefficient of the polysilicon resistance can be positive or negative, depending on processing conditions. Simulation results in the temperature range 200-800 K are presented. Observed trends in simulation results can be satisfactory compared to the measurement results in the range 230-450 K. Instructions for design of polysilicon resistors with emphasis on temperature coefficients of resistance - TCR are given.