Horizontal Current Bipolar Transistor (HCBT) in AKM’s 0, 18μm BiCMOS Process: 4th Lot Device Simulation

Numerical TCAD simulations of HCBT fabrication is performed and the resulting doping profiles are fitted tot he measured SIMS results. Numerical simulations of electrical characteristics of the resulting transistor structures are done and the the fabrication sequence is optimized to obtain maximum cut-off frequency, maximum frequency of oscillations and the product of cut-off frequency and breakdown voltage.