Calculation Methods for Tunneling Transmission Coefficients

This paper investigates several methods for calculation of Tunneling Coefficient (TC) as the most important part of the tunneling current calculation procedure. Investigated methods are Wentzler-Kramers-Brillouin (WBK) approximation, Transmission Matrix method (TM) and Continued Fractions method (CF). Several versions of these methods are presented. Test structures are simplified rectangular, trapezoidal and bell-shaped potential barriers for electrons in Si-SiO2-Si MOS structure where an exact solution for TC exists. Comparison of investigated methods regarding their accuracy, complexity and calculation demands is made. Based on these merits, recommendation for the choice of method for device simulation is given.