Band-to-Band Tunneling Related Effects in a Thin MOS Structure

The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 1018-1019 cm¡3 with an 2-3 nm oxide, is studied theoretically. The BBT is shown to supply the minority carriers toward the Si=SiO2 interface. This effect can support the inversion layer in the nonequilibrium and modify the I-V and C-V curves.