An Accurate and Efficient Surface Scattering Model for Monte Carlo Device Simulation

A new efficient model for electron surface scattering in Si/SiO2 MOS structures for Monte Carlo device simulation compatible with quantum correction of the carrier density is presented. The model is based on simplified physics based equations for nonlocal surface roughness scattering and surface phonons scattering rates. Some model parameters are adjusted and a few additional terms are introduced to match the relevant measurements. The simulation model reproduces the measured low-field effective mobility vs. effective field curves with excellent accuracy including the temperature dependence. Device simulations of a MOS transistor with the new surface scattering model and additional effects (contact resistances and self-heating) were performed. The results were compared to the measurements and simulation results from a classical device simulator (drift-diffusion and hydrodynamic model) with an equivalent quantum correction and similar surface mobility model.