A Methodology for Consistent MC, HD and DD Simulations of Submicrometer NMOSFETs

The accuracy of classical numerical device simulation (HD, DD) is questionable for nanometer scale MOSFETs. Full Band Monte- Carlo Device Simulation can serve as a physical reference for accessing the HD, DD modeling accuracy by comparing the modeling results. However all models (MC, HD, DD) need to be as consistent as possible to make such a comparison meaningful. Therefore a methodology for achieving a consistent comparison of MC, HD, DD models in the case of nanometer scale NMOSFETs is outlined in this paper.